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NCE04N65
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry's AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. VDS RDS(ON) ID 650 950 4.5 V m A
Features
New technology for high voltage device Low on-resistance and low conduction losses small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested
Application

Power factor correctionPFC Switched mode power supplies(SMPS) Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device NCE04N65 Device Package TO-251S Marking NCE04N65
TO-251S
Absolute Maximum Ratings (TC=25) Parameter Symbol Drain-Source Voltage (VGS=0V VDS Gate-Source Voltage (VDS=0V) VGS Continuous Drain Current at Tc=25C ID (DC) Continuous Drain Current at Tc=100C ID (DC) (Note 1) IDM (pluse) Pulsed drain current Table 1.
Drain Source voltage slope, VDS = 480 V, ID = 4.5 A, Tj = 125 C Maximum Power Dissipation(Tc=25)
NCE04N65
650 30 4.5 2.8 13.5 50 50 0.4 130 4.5
Unit
V V A A A
dv/dt
V/ns
W
W/C
PD
EAS IAR
Single pulse avalanche energy Avalanche current
(Note 1)
Derate above 25C (Note2)
mJ
A
Wuxi NCE Power Semiconductor Co., Ltd
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Repetitive Avalanche energy tAR limited by Tjmax
(Note 1)
EAR
0.4 -55...+150
mJ
C
Operating Junction and Storage Temperature Range
TJ,TSTG Symbol
RthJC RthJA
Table 2.
Thermal Characteristic Parameter
NCE04N65
2.5 75
Unit
C /W C /W
Thermal ResistanceJunction-to-CaseMaximum Thermal ResistanceJunction-to-Ambient Maximum
Table 3.
Electrical Characteristics (TA=25unless otherwise noted) Parameter Symbol Condition
BVDSS IDSS IDSS IGSS VGS(th) RDS(ON) gFS Clss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf ISD ISDM VSD trr Qrr VDD=380V,ID=4.5A, RG=18,VGS=10V VGS=0V ID=250A VDS=650V,VGS=0V VDS=650V,VGS=0V VGS=30V,VDS=0V VDS=VGS,ID=250A VGS=10V, ID=10A VDS = 20V, ID = 2.5A VDS=100V,VGS=0V, F=1.0MHz
Min
650
Typ
Max
Unit
V
On/off states Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current(Tc=25) Zero Gate Voltage Drain Current(Tc=125) Gate-Body Leakage Current Gate Threshold Voltage Drain-Source On-State Resistance Dynamic Characteristics Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching times Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Source- Drain Diode Characteristics Source-drain current(Body Diode) Pulsed Source-drain current(Body Diode) Forward on voltage Reverse Recovery Time Reverse Recovery Charge 2. Tj=25,VDD=50V,VG=10V, RG=25 TC=25C Tj=25C,ISD=4.5A,VGS=0V Tj=25C,IF=4.5A,di/dt=100A/s 1 300 2.6 4.5 13.5 1.3 A A V nS nC 6 2.5 58.5 9.5 80 14 nS nS nS nS 5 480 25 2 19 2.2 8.8 25 S PF PF PF nC nC nC 1 50 100 2.5 3 850 3.5 950 A A nA V m
VDS=480V,ID=4.5A, VGS=10V
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
Wuxi NCE Power Semiconductor Co., Ltd
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Pb-Free Product
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area for NCE04N65 Figure3. Source-Drain Diode Forward Voltage
Figure4. Output characteristics
Figure5. Transfer characteristics
Figure6. Static drain-source on resistance
Figure7. RDS(ON) vs Junction Temperature
Wuxi NCE Power Semiconductor Co., Ltd
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Pb-Free Product
Figure8. BVDSS vs Junction Temperature
Figure9. Maximum ID vs Junction Temperature
Figure10. Gate charge waveforms
Figure10. Capacitance
Figure11. Transient Thermal Impedance for NCE04N65
Wuxi NCE Power Semiconductor Co., Ltd
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Pb-Free Product
Testcircuit
1Gate charge test circuit & Waveform
2Switch Time Test Circuit
3Unclamped Inductive Switching Test Circuit & Waveforms
Wuxi NCE Power Semiconductor Co., Ltd
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Pb-Free Product
TO-251S Package Information
Symbol A A1 B b b1 c c1 D D1 E e1 e2 L
Dimensions In Millimeters Min. 2.250 1.150 10.200 0.550 0.750 0.480 0.480 6.400 5.250 5.400 2.300 TYP 2.300 TYP 3.300 3.700 Max. 2.350 1.250 10.800 0.650 0.850 0.540 0.540 6.600 5.350 5.600
Dimensions In Inches Min. 0.089 0.045 0.402 0.022 0.030 0.019 0.019 0.252 0.207 0.213 0.091 TYP 0.091 TYP 0.130 0.146 Max. 0.093 0.049 0.425 0.026 0.033 0.021 0.021 0.260 0.211 0.220
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ATTENTION:
Any and all NCE products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE representative nearest you before using any NCE products described or contained herein in such applications. NCE assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE products described or contained herein. Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE Power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product that you intend to use. This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice.

Wuxi NCE Power Semiconductor Co., Ltd
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